Physical Review B
The American Physical Society
We compute the intrinsic contributions to the Berry-phase mediated anomalous Hall and Nernst effects in electron- and hole-doped semiconductors in the presence of an in-plane magnetic ﬁeld as well as Rashba and Dresselhaus spin-orbit couplings. For both systems we ﬁnd that the regime of chemical potential which supports the topological superconducting state in the presence of the superconducting proximity effect can be characterized by plateaus in the topological Hall and Nernst coefﬁcients ﬂanked by well-deﬁned peaks marking the emergence of the topological regime. The plateaus arise from a clear momentum space separation between the region where the Berry curvature is peaked (at the “near-band-degeneracy” points) and the region where the single (or odd number of) Fermi surface lies in the Brillouin zone. The plateau for the Nernst coefﬁcient is at vanishing magnitudes surrounded by two large peaks of opposite signs as a function of the chemical potential. These results could be useful for experimentally deducing the chemical potential regime suitable for realizing topological states in the presence of the proximity effect.
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