PROCEEDINGS OF THE XII INTERNATIONAL SYMPOSIUM ON ELECTRON BEAM ION SOURCES AND TRAPS
A new electron beam ion trap (EBIT) based ion source and beamline were recently commissioned at Clemson University to produce decelerated beams of multi- to highly-charged ions for surface and materials physics research. This user facility is the first installation of a DREEBIT-designedsuperconducting trap and ion source (EBIS-SC) in the U.S. and includes custom-designed target preparation and irradiation setups. An overview of the source, beamline, and other facilities as well as results from first measurements on irradiated targets are discussed here. Results include extracted charge state distributions and first data on a series of irradiated metal-oxide-semiconductor (MOS) device targets. For the MOS devices, we show that voltage-dependent capacitance can serve as a record of theelectronic component of ion stopping power for an irradiated, encapsulated oxide target.
Please use the publisher's recommended citation. http://scitation.aip.org/content/aip/proceeding/aipcp/10.1063/1.4905410