The potential of wide band gap (WBG) semiconductors for manufacturing ultra-high performance power devices and systems is well known . Historically, silicon carbide research is as old as is the discovery of transistors . In recent years, significant progress has been made in reducing the bulk crystal defects. As a result, for niche applications some SiC and GaN products are currently in the market. However, silicon dominates the power devices and systems market. In an earlier publication  we pointed out that bulk crystal defects and process induced defects are still the major road blocks in creating a SiC and GaN semiconductor based power devices and power systems market. This is due to the fact that best values of performance, reliability and yield of semiconductor products can be obtained only when the microstructure is homogenous and minimum defect density is observed . It is a well-known fact in semiconductor manufacturing that other than feature size reduction, the prime reason for the success of silicon manufacturing for low power and power devices has been the reduction of defect density. Currently the defect density of SiC and GaN based products is several orders of magnitude higher than the defect density of Si based semiconductor products. The general notion in the WBG semiconductor based power devices and power system community has been that older generation of silicon manufacturing is good enough to manufacturer WBG based power devices . The prime reason for the success of silicon manufacturing is that the process control of semiconductor manufacturing has evolved from classical statistical process control (SPC) to advanced process control (APC). In other words, batch processing has been replaced by single wafer processing . The key objective of this paper is to demonstrate that without making major process control changes in SiC and GaN processing, these materials will have only niche markets in power semiconductor devices and systems manufacturing.
Please use the publisher's recommended citation. http://ma.ecsdl.org/content/MA2016-02/35/2243.abstract