Date of Award

May 2020

Document Type


Degree Name

Master of Science (MS)


Electrical and Computer Engineering (Holcomb Dept. of)

Committee Member

Goutam Koley

Committee Member

Rod Harrell

Committee Member

Judson Ryckman


State-of-theart technology demands new exotic materials fit for utilization in miniaturized circuits; also, additionally, increase their capabilities. Transition metal oxides have attracted keen interest over the last decade, thanks to the variety of physical properties that they exhibit. These thesis works present a study for the development and characterization of VO2 on substrates; AlGaN/ GaN, SiO2, and Sapphire. The Oxides of Vanadium has exclusive properties with a potential novel application within the Integrated-Circuits industry. The low-pressure chemical vapor deposition technique makes a highly pure and ordered form of crystalline thin films of VO2 on every one of those substrates. The sharp transition in electrical and structural properties of VO2 throughout the Metal-Insulator Transition (MIT) is suitable for varied electronic, optoelectronic, and sensing applications. We have primarily studied Chemical Vapor Deposition based synthesis of VO2 on metallic element chemical compound (AlGaN) thin films and compared them with those synthesized on Silicon and Sapphire. Thin-film Vanadium metal (35 nm and 70 nm) is deposited on different substrates, followed by oxidization to yield Vanadium dioxide films. The result of deposition time, oxygen flow rate, substrate temperature, radiative cooling time, and chamber pressure consistently studied to get the most effective quality films. The synthesis is conducted on comparatively large area vanadium deposited samples, and microscale vanadium patterned samples. The as-grown Vanadium Dioxide films were characterized by AFM and XRD techniques to work out their structural and crystalline qualities. VO2 films synthesized under optimal CVD growth conditions were successfully used in GaN MEMS devices for sensitive deflection transduction.



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