Document Type
Patent
Publication Date
11-15-2016
Patent Number
9493887
CPC
C30B 7110 (2013.01); C30B 7100 (2013.01)
Abstract
Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing a vanadate-based activator region and a vanadate-based Q-switch. Disclosed methods include hydrothermal growth techniques for the growth of differing layers on a host. A YVO4 host material can be doped in one region with a suitable active lasing ion and can be formed with another region that is doped with a saturable absorber. Regions can be formed with controlled thickness. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity to provide short pulses of high power emissions using high frequency pulse modes.
Application Number
14/497949
Assignees
Clemson University (Clemson, SC, US)
Filing Date
09/26/2014
Primary/U.S. Class
1/1